Asosiy kontentga oʻtish
AkademScholar

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBasetez oradaDasturchilar API
Jurnal

Technical Physics

ISSN:
1063-7842
10
h-indeks
350
Iqtiboslar
133
Asarlar
0.00
2-yillik oʻrtacha iqtibos

Ishonch signallari

1 dan 3 signal mavjud

Mustaqil ijobiy signallar — yagona “predator/qonuniy” hukmi emas, balki yaqinlashuvchi tasvir.

  • DOAJ
    Maʼlumot yoʻq
    doaj.org
  • OAK roʻyxati
    Maʼlumot yoʻq
    OAK
  • Yaroqli ISSN
    Mavjud
    ISSN

Bu axborot yorligʻi, rasmiy qaror emas. Signal yoʻqligi jazo emas — masalan, mintaqaviy jurnal DOAJ'da boʻlmasligi mumkin.

Eng koʻp iqtibos qilingan asarlar

  1. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission201119 iqtibos
  2. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation201319 iqtibos
  3. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation201415 iqtibos
  4. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods201315 iqtibos
  5. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment201714 iqtibos
  6. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation201814 iqtibos
  7. Effect of the O+2-ion bombardment on the TiN composition and structure201513 iqtibos
  8. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation201513 iqtibos
  9. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film201912 iqtibos
  10. Silicon with Magnetic Nanoclusters of Manganese Atoms as a New Ferromagnetic Material201910 iqtibos