N.S. Savkina

Eng koʻp iqtibos qilingan asarlar

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region20032 iqtibos
2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate20042 iqtibos
3. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam20001 iqtibos
4. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation20031 iqtibos
5. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation20041 iqtibos
6. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure20071 iqtibos
7. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation20000 iqtibos
8. Growth of SiC and GaN on Porous Buffer Layers20000 iqtibos
9. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization20020 iqtibos
10. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation20030 iqtibos

Hammualliflar

1. A. А. Lebedev12 ta umumiy asar2000–2007
2. Anatoly M. Strel’chuk10 ta umumiy asar2000–2007
3. Alexey N. Kuznetsov7 ta umumiy asar2000–2007
4. D. V. Davydov5 ta umumiy asar2000–2004
5. A. S. Tregubova4 ta umumiy asar2000–2003
6. L. M. Sorokin2 ta umumiy asar2003–2004
7. G. N. Mosina2 ta umumiy asar2003–2004
8. V. A. Soloviev2 ta umumiy asar2002–2004
9. Е. В. Богданова2 ta umumiy asar2000–2003
10. M. Ya. Valakh1 ta umumiy asar2004

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