D. V. Davydov

Eng koʻp iqtibos qilingan asarlar

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region20032 iqtibos
2. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam20001 iqtibos
3. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation20041 iqtibos
4. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation20000 iqtibos
5. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization20020 iqtibos
6. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions20030 iqtibos
7. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers20040 iqtibos
8. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions20050 iqtibos

Hammualliflar

1. Anatoly M. Strel’chuk8 ta umumiy asar2000–2005
2. A. А. Lebedev5 ta umumiy asar2000–2004
3. N.S. Savkina5 ta umumiy asar2000–2004
4. Alexey N. Kuznetsov4 ta umumiy asar2000–2004
5. Andrey O. Konstantinov3 ta umumiy asar2003–2005
6. Anders Hallén3 ta umumiy asar2003–2005
7. G. Kholuyanov3 ta umumiy asar2003–2005
8. Evgenia V. Kalinina3 ta umumiy asar2003–2005
9. Grigory Onushkin2 ta umumiy asar2003–2005
10. В.А. Скуратов2 ta umumiy asar2003–2005

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