Konstantinos Zekentes

Eng koʻp iqtibos qilingan asarlar

1. Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions20000 iqtibos
2. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode20020 iqtibos
3. Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability20030 iqtibos
4. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers20030 iqtibos
5. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications20030 iqtibos
6. About the Nature of Recombination Current in 4H-SiC pn Structures20060 iqtibos

Hammualliflar

1. N.I. Kuznetsov4 ta umumiy asar2002–2003
2. Roumen Kakanakov4 ta umumiy asar2002–2003
3. Liliana Kassamakova3 ta umumiy asar2002–2003
4. N. Hristeva3 ta umumiy asar2002–2003
5. G. Lepoeva3 ta umumiy asar2002–2003
6. G. Sarov2 ta umumiy asar2003
7. T. Cholakova2 ta umumiy asar2003
8. A. А. Lebedev1 ta umumiy asar2006
9. Anatoly M. Strel’chuk1 ta umumiy asar2006
10. A.N. Volkova1 ta umumiy asar2006

Barcha hammualliflar →