N. B. Strokan

Eng koʻp iqtibos qilingan asarlar

1. Carrier transport in a diode base with locally nonuniform recombination properties19971 iqtibos
2. High Energy Resolution Detectors Based on 4H-SiC20051 iqtibos
3. Determination of the uniformity of the carrier lifetime in a material from the profile of the amplitude spectrum of an ion detector19980 iqtibos
4. Behavior of epitaxial GaAs layers as α particle detectors19980 iqtibos
5. On the generation of radiation defects by accelerated ions in silicon19980 iqtibos
6. Radiation Hardness of Silicon Carbide20030 iqtibos
7. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation20030 iqtibos
8. Radiation Hard Devices Based on SiC20060 iqtibos
9. 4H-SiC High Temperature Spectrometers20070 iqtibos
10. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C20090 iqtibos

Hammualliflar

1. Alexander M. Ivanov6 ta umumiy asar2003–2009
2. A. А. Lebedev4 ta umumiy asar2003–2009
3. Evgenia V. Kalinina4 ta umumiy asar2005–2009
4. Anatoly M. Strel’chuk3 ta umumiy asar2003–2006
5. G. Kholuyanov2 ta umumiy asar2005–2006
6. Denis Davydov2 ta umumiy asar2003
7. Rositza Yakimova2 ta umumiy asar2003
8. А. В. Иванов2 ta umumiy asar1997–1998
9. V. Kossov1 ta umumiy asar2007
10. R. R. Yafaev1 ta umumiy asar2007

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