Evgenia V. Kalinina

Eng koʻp iqtibos qilingan asarlar

1. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method20022 iqtibos
2. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures20052 iqtibos
3. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices20022 iqtibos
4. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers20031 iqtibos
5. High Energy Resolution Detectors Based on 4H-SiC20051 iqtibos
6. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN19970 iqtibos
7. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC20000 iqtibos
8. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density20000 iqtibos
9. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions20030 iqtibos
10. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers20040 iqtibos

Hammualliflar

1. Andrey O. Konstantinov8 ta umumiy asar2000–2005
2. Anders Hallén8 ta umumiy asar2000–2005
3. Anatoly M. Strel’chuk7 ta umumiy asar2002–2013
4. G. Kholuyanov7 ta umumiy asar2002–2006
5. A. А. Lebedev4 ta umumiy asar2006–2013
6. Alexander M. Ivanov4 ta umumiy asar2005–2009
7. N. B. Strokan4 ta umumiy asar2005–2009
8. Grigory Onushkin4 ta umumiy asar2002–2005
9. E. Kolesnikova3 ta umumiy asar2007–2009
10. M. V. Zamoryanskaya3 ta umumiy asar2007–2009

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