A. Yu. Leyderman

Eng koʻp iqtibos qilingan asarlar

1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x200913 iqtibos
2. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature20108 iqtibos
3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy20098 iqtibos
4. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)20164 iqtibos
5. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure20184 iqtibos
6. Features of polycrystalline silicon fabricated by fivefold remelting in a solar furnace20103 iqtibos
7. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al₂O₃‐<i>p</i>‐CdTe‐Mo Structure20211 iqtibos
8. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy20221 iqtibos
9. Determining certain physical settings of photocells20110 iqtibos
10. Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity20200 iqtibos

Hammualliflar

1. А. С. Саидов6 ta umumiy asar2009–2022
2. Sh. N. Usmonov5 ta umumiy asar2009–2022
3. A.K. Uteniyazov3 ta umumiy asarSkelet yozuvlar: 12020–2021
4. D. V. Saparov2 ta umumiy asar2009–2022
5. M. V. Gafurova2 ta umumiy asar2020–2021
6. Khomidkhodzha Kholikov2 ta umumiy asar2009
7. A. M. Akhmedov1 ta umumiy asar2022
8. U. Kh. Rakhmonov1 ta umumiy asar2022
9. Q. T. Suyarov1 ta umumiy asar2022
10. K. A. Dauletov1 ta umumiy asar2021

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