А. С. Саидов

Eng koʻp iqtibos qilingan asarlar

1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x200126 iqtibos
2. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x200913 iqtibos
3. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)202113 iqtibos
4. Thermovoltaic properties of technical silicon melted by solar radiation200713 iqtibos
5. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy20109 iqtibos
6. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure20199 iqtibos
7. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)20138 iqtibos
8. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−<i>x</i>(ZnSe)_<i>x</i> with Nanocrystals20198 iqtibos
9. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties20118 iqtibos
10. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy20098 iqtibos

Hammualliflar

1. Sh. N. Usmonov42 ta umumiy asar2007–2025
2. D. V. Saparov23 ta umumiy asarSkelet yozuvlar: 11996–2026
3. М. С. Саидов17 ta umumiy asar2004–2017
4. A. Yu. Leĭderman16 ta umumiy asar2009–2020
5. M. U. Kalanov15 ta umumiy asar2010–2025
6. U. Kh. Rakhmonov11 ta umumiy asar2010–2026
7. K. A. Amonov10 ta umumiy asar2008–2019
8. A. Sh. Razzokov8 ta umumiy asar2022–2025
9. A. Sh. Razzakov8 ta umumiy asar1998–2022
10. Khomidkhodzha Kholikov8 ta umumiy asar2007–2009

Barcha hammualliflar →