Sh. N. Usmonov

Eng koʻp iqtibos qilingan asarlar

1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x200913 iqtibos
2. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)202113 iqtibos
3. Thermovoltaic properties of technical silicon melted by solar radiation200713 iqtibos
4. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy20109 iqtibos
5. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure20199 iqtibos
6. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature20108 iqtibos
7. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)20138 iqtibos
8. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−<i>x</i>(ZnSe)_<i>x</i> with Nanocrystals20198 iqtibos
9. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties20118 iqtibos
10. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy20098 iqtibos

Hammualliflar

1. А. С. Саидов42 ta umumiy asar2007–2025
2. D. V. Saparov15 ta umumiy asar2007–2025
3. М. С. Саидов15 ta umumiy asar2007–2017
4. M. U. Kalanov10 ta umumiy asar2010–2025
5. K. A. Amonov8 ta umumiy asar2008–2019
6. Khomidkhodzha Kholikov8 ta umumiy asar2007–2009
7. A. M. Akhmedov6 ta umumiy asar2020–2025
8. U. Kh. Rakhmonov5 ta umumiy asar2010–2023
9. A. Yu. Leyderman5 ta umumiy asar2009–2022
10. A. Yu. Leĭderman5 ta umumiy asar2009–2020

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