A. Sh. Razzakov

Eng koʻp iqtibos qilingan asarlar

1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x200126 iqtibos
2. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)202113 iqtibos
3. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties20227 iqtibos
4. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers20022 iqtibos
5. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x19982 iqtibos
6. Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt20012 iqtibos
7. Liquid phase epitaxy of Ge1−xSnx semiconductor films20012 iqtibos
8. Growth of perfect-crystal Si-Si1−xGex-(Ge2)1−x(InP)x structures from the liquid phase19990 iqtibos
9. Growth of Ge1−xSnnx solid solutions from the liquid phase20010 iqtibos
10. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase20200 iqtibos

Hammualliflar

1. А. С. Саидов8 ta umumiy asar1998–2022
2. D. V. Saparov3 ta umumiy asar2002–2022
3. É. A. Koshchanov3 ta umumiy asar1998–2001
4. Sh. N. Usmonov2 ta umumiy asar2021–2022
5. M. U. Kalanov2 ta umumiy asar2021–2022
6. А. Кутлимратов1 ta umumiy asar2021
7. A. M. Akhmedov1 ta umumiy asar2021
8. A. Latipova1 ta umumiy asar2021
9. Jurabek Abdiev1 ta umumiy asar2021
10. Alibek Qodirov1 ta umumiy asar2021

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